6
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 5
14
20
0
60
50
40
30
20
?
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
10
100 300
10
-- 5 0
ACPR (dBc)
19
18
-- 2 0
-- 3 0
Figure 6. Broadband Frequency Response
0
24
600
f, FREQUENCY (MHz)
VDD
=28Vdc
Pin
=0dBm
IDQ
= 1700 mA
12
8
700
GAIN (dB)
20
800 900 1000 1100 1200
IRL
-- 1 8
0
-- 3
-- 6
-- 9
-- 1 2
IRL (dB)
-- 1 5
17
16
15
-- 4 5
-- 4 0
-- 3 5
920 MHz
960 MHz
920 MHz
4
16
Gps
940 MHz
960 MHz
VDD=28Vdc,IDQ
= 1700 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on
CCDF
960 MHz
940 MHz
920 MHz
940 MHz
?D
Gain
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
1357924 6810
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
?5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on
CCDF
Input Signal
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.2
1.8 5.43.6
0
-- 1 . 8-- 3 . 6-- 5 . 4
-- 9
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
相关PDF资料
MRF9002NR2 MOSFET RF N-CHAN 26V 2W 16-PFP
MRF9030NBR1 IC MOSFET RF N-CHAN TO272-2
MRF9045LR1 IC MOSFET RF N-CHAN NI-360
MRF9045NBR1 IC MOSFET RF N-CHAN TO272-2
MRF9060LR5 IC MOSFET RF N-CHAN NI-360
MRF9080LR3 IC MOSFET RF N-CHAN NI-780
MRF9120LR3 IC MOSFET RF N-CHAN NI-860
MRFE6P3300HR5 MOSFET RF N-CH 300W 32V NI-860C3
相关代理商/技术参数
MRF8S9260HSR5 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002NR2 功能描述:射频MOSFET电源晶体管 FR PWR FET ARRAY PFP-16N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002R2 制造商:MOT 功能描述:_
MRF9002RS 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR ARRAY
MRF901 制造商:Motorola Inc 功能描述:
MRF9011 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor
MRF9011L 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor
MRF9011LT1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor